Two-step chemical vapor deposition synthesis of NiTe₂-MoS₂ vertical junctions with improved MoS₂ transistor performance

Abstract The primary challenge for the widespread application of two-dimensional (2D) electronics is to achieve satisfactory electrical contacts because, during traditional metal integration process, difficulties arise due inevitable physical damage and selective doping. Two-dimensional metal–semiconductor junctions have attracted attention potential reliable in future atomically thin electronics. Here we demonstrate van der Waals epitaxial growth 2D NiTe 2 -MoS vertical where upper selectively nucleates at edge underlying MoS . Optical microscopy (OM), scanning electron (SEM), atomic force (AFM), transmission microscope (STEM) studies confirmed that had been successfully synthesized. properties -contacted field-effect transistors (FETs) showed higher mobilities ( μ FE ) than those with deposited Cr/Au contacts. This study demonstrates an effective pathway improved transistor performance junctions.